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SCT3120ALHRC11

Part No SCT3120ALHRC11
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 156mOhm @ 6.7A, 18V
Vgs(th) (Max) @ Id 5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 500 V
Power Dissipation (Max) 103W
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Base Product Number SCT3120
Standard Package 30
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278183-SCT3120ALHRC11
Ultra Librarian 3D Model Ultra Librarian SCT3120ALHRC11 CAD Model

Description

The Rohm Semiconductor electronic component with Win Source Part Number 1278183-SCT3120ALHRC11 is an N-Channel SiCFET (Silicon Carbide) product with a drain to source voltage of 650V.

  • Continuous Drain Current: 21A (Tc) @ 25°C
  • Maximum Rds On: 156mOhm @ 6.7A, 18V
  • Maximum Gate Charge: 38 nC @ 18V
  • Case/Package: TO-247-3
  • Maximum Vgs: +22V, -4V
  • Status: Not for new designs
  • Drive Voltage (Max Rds On, Min Rds On): 18V

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.7705 $55.0820
9+ $11.2989 $101.6901
14+ $10.9458 $153.2412
19+ $10.5927 $201.2613
25+ $10.2396 $255.9900
33+ $9.1804 $302.9532
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Availability: 3,494 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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