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Same model may have multiple batches, images only for reference.
SCT3160KLHRC11 Real Image
Same model may have multiple batches, images only for reference.

SCT3160KLHRC11

Part No SCT3160KLHRC11
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 208mOhm @ 5A, 18V
Vgs(th) (Max) @ Id 5.6V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 398 pF @ 800 V
Power Dissipation (Max) 103W
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Base Product Number SCT3160
Standard Package 30
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278184-SCT3160KLHRC11
Ultra Librarian 3D Model Ultra Librarian SCT3160KLHRC11 CAD Model

Description

The SCT3160KLHRC11 is a high-quality N-channel SiCFET (Silicon Carbide) transistor that is designed for use in a variety of applications.

  • Drain to Source Voltage (Vdss): 1200V
  • Continuous Drain Current (Id): 17A (Tc) @ 25°C
  • Maximum On Resistance (Rds On): 208mOhm @ 5A, 18V
  • Maximum Gate Charge (Qg): 42 nC @ 18 V
  • Supply and Demand Status: Balanced
  • Package: TO-247-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.3689 $68.2134
13+ $9.3284 $121.2692
20+ $9.0369 $180.7380
27+ $8.7454 $236.1258
35+ $8.4539 $295.8865
46+ $7.5793 $348.6478
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,800 pieces
In Stock: 900 pieces Factory Stock: 900 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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