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Same model may have multiple batches, images only for reference.
IRFP31N50L Real Image
Same model may have multiple batches, images only for reference.

IRFP31N50L

Part No IRFP31N50L
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=500V, Rds(on)typ.=0.15ohm, Id=31A) | MOSFET N-CH 500V 31A TO-247AC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 31A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 180mOhm at 19A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 210nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 5000pF at 25V
Power Dissipation (Maximum) 460W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1187783-IRFP31N50L
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFP31N50L CAD Model

Description

The Vishay Siliconix IRFP31N50L is a MOSFET transistor with an N-channel polarity.

  • Maximum Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 31A
  • Maximum On-Resistance: 180mOhm @ 19A and 10V
  • Gate-Source Voltage Threshold: 5V @ 250μA
  • Gate Charge: 210nC @ 10V
  • Input Capacitance: 5000pF @ 25V
  • Package: TO-247-3
  • Mounting Type: Through Hole
  • Power Dissipation: 460W
  • Popularity: Medium
  • Status: Obsolete
  • Manufacturer's Homepage: www.irf.com
  • Manufacturer Pack Quantity: 500
  • MSL Level: 1 (Unlimited)

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