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SCT4018KRC15

Name: SCT4018KRC15
Brand: Rohm Semiconductor
SKU: 1353612
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SCT4018KRC15
Manufacturer	Rohm Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	1200V, 18M, 4-PIN THD, TRENCH-ST / N-Channel 1200 V 81A (Tc) 312W Through Hole TO-247-4L
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Rohm Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	81A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	23.4mOhm @ 42A, 18V
Vgs(th) (Max) @ Id	4.8V @ 22.2mA
Gate Charge (Qg) (Max) @ Vgs	170 nC @ 18 V
Vgs (Max)	+21V, -4V
Input Capacitance (Ciss) (Max) @ Vds	4532 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	312W
Temperature Range - Operating	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4
Base Product Number	SCT4018
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1353612-SCT4018KRC15
Ultra Librarian 3D Model	Ultra Librarian SCT4018KRC15 CAD Model

Alternative Products

Description

The SCT4018KRC15 is a single N-Channel MOSFET from Rohm Semiconductor.

Application: Power Management
Operating Temperature: 175°C
Drain to Source Voltage: 1200V
Continuous Drain Current: 81A
On-Resistance: 23.4mOhm @ 42A
Gate Charge: 170nC @ 18V
Technology: SiCFET (Silicon Carbide)
Package: TO-247-4
Mounting Type: Through-Hole

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
1+	$53.0791	$53.0791
3+	$43.5521	$130.6563
4+	$42.1911	$168.7644
5+	$40.8301	$204.1505
7+	$39.4691	$276.2837
9+	$35.3861	$318.4749

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

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