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Same model may have multiple batches, images only for reference.
SP8K3FU6TB Real Image
Same model may have multiple batches, images only for reference.

SP8K3FU6TB

Part No SP8K3FU6TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 7A 8SOIC
Datasheet
SP8K3FU6TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7A
Maximum Rds On at Id,Vgs 24 mOhm @ 7A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 11.8nC @ 5V
Max Input Capacitance 600pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 047203-SP8K3FU6TB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SP8K3FU6TB CAD Model

Description

The Rohm Semiconductor 047203-SP8K3FU6TB is a 2 N-Channel (Dual) FET with Logic Level Gate feature and a maximum power dissipation of 2W.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 7A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 11.8nC @ 5V
  • Maximum Input Capacitance: 600pF @ 10V
  • Maximum Rds On at Id,Vgs: 24 mOhm @ 7A, 10V
  • Package: 8-SOP
  • Operating Temperature Range: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.3352 $63.3520
23+ $5.1987 $119.5701
35+ $5.0358 $176.2530
48+ $4.8729 $233.8992
62+ $4.7112 $292.0944
83+ $4.2238 $350.5754
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Availability: 2,630 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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