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Same model may have multiple batches, images only for reference.
SP8M7TB Real Image
Same model may have multiple batches, images only for reference.

SP8M7TB

Part No SP8M7TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 5A/7A 8SOIC
Datasheet
SP8M7TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A, 7A
Maximum Rds On at Id,Vgs 51 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 5.5nC @ 5V
Max Input Capacitance 230pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 134724-SP8M7TB
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SP8M7TB CAD Model

Description

The SP8M7TB is a logic level gate N and P-channel FET manufactured by Rohm Semiconductor.

  • Status: Obsolete (EOL)
  • Maximum Power Dissipation: 2W
  • Continuous Drain Current: 5A or 7A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 5.5nC @ 5V
  • Maximum Rds on at Id,Vgs: 51 mOhm @ 5A, 10V
  • Package: 8-SOP
  • Operating Temperature Range: 150°C (TJ)

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