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UM2222AU3T106

Part No UM2222AU3T106
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description TRANS NPN 40V 0.6A UMT3  /  Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 200 mW Surface Mount UMT3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Rohm Semiconductor
Package Tape & Reel
Transistor Type NPN
Current - Collector (Ic) (Max) 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 200 mW
Frequency - Transition 300MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package UMT3
Base Product Number UM2222
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 846-UM2222AU3T106CT,846-UM2222AU3T106TR,846-UM2222AU3T106DKR
Standard Package 3,000
Win Source Part Number 1102228-UM2222AU3T106
Ultra Librarian 3D Model Ultra Librarian UM2222AU3T106 CAD Model

Description

The UM2222AU3T106 is a bipolar transistor manufactured by Rohm Semiconductor.

  • This product is an NPN transistor with a maximum power of 200mW and a voltage breakdown of 40V.
  • It has a maximum collector current of 600mA and a Vce saturation of 1V @ 50mA, 500mA.
  • The device package is UMT3 and the package type is SC-70, SOT-323.
  • It has a frequency transition of 300MHz and a minimum DC current gain of 100 @ 150mA, 10V.

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