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UM6K1NTN

Part No UM6K1NTN
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V .1A SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100mA
Maximum Rds On at Id,Vgs 8 Ohm @ 10mA, 4V
Gate-Source Threshold Voltage 1.5V @ 100μA
Max Input Capacitance 13pF @ 5V
Maximum Power Dissipation 150mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UMT6
Win Source Part Number 035973-UM6K1NTN
Family Name UM6K1N
Introduction Date September 11, 1998
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian UM6K1NTN CAD Model

Description

The UM6K1NTN is a Dual N-Channel Logic Level Gate FET from Rohm Semiconductor.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 100mA
  • Gate-Source Threshold Voltage: 1.5V @ 100μA
  • Rds On @ Id,Vgs: 8 Ohm @ 10mA, 4V
  • Power Dissipation: 150mW (Maximum)
  • Input Capacitance: 13pF @ 5V (Maximum)
  • Case/Package: UMT6
  • Suitable for: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
905+ $0.0555 $50.2275
2,195+ $0.0456 $100.0920
3,405+ $0.0441 $150.1605
4,685+ $0.0427 $200.0495
6,055+ $0.0413 $250.0715
8,110+ $0.0370 $300.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 319,000 pieces
MOQ: 905 pcs
Order Increment : 1 pcs
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