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STS8215

Part No STS8215
Manufacturer SamHop
Catalog HOT - SALES and EOL Components (S)
Description Dual N-Channel E nhancement Mode F ield E ffect Transistor
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Manufacturer SamHop
Win Source Part Number 348279-STS8215
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STS8215 CAD Model

Description

The STS8215 is a P-Channel enhancement mode power MOSFET from SamHop Microelectronics. This MOSFET is engineered to deliver efficient power switching capabilities, making it well-suited for various applications, including load switching, power supplies, and DC-DC converters. Its key characteristics include low on-resistance and fast switching speeds.

Applications:

  • Load Switching: Efficiently controls power delivery to different loads in electronic systems.
  • Power Supplies: Integrated into power supply designs for regulating voltage levels.
  • DC-DC Converters: Used in DC-DC conversion circuits to step up or step down voltages.
  • Battery Management Systems (BMS): Acts as a switching element in battery charging and discharging circuits.
  • Power Management in Portable Devices: Optimized for power management in devices like smartphones, tablets, and laptops.

Features:

  • P-Channel Enhancement Mode: Functions as a P-Channel MOSFET, offering ease of control.
  • Low On-Resistance (RDS(on)): Minimizes power loss and enhances efficiency with low RDS(on) values, dependent on VGS (gate-source voltage).
  • Fast Switching Speed: Provides rapid switching capabilities for high-frequency operation.
  • Low Gate Charge: Simplifies gate drive requirements by reducing gate charge.
  • Avalanche Rated: Offers enhanced reliability by withstanding avalanche conditions.
  • Surface Mount Package: Available in surface-mount packages for easy PCB integration.

Benefits:

  • High Efficiency: Low RDS(on) leads to reduced power dissipation and increased efficiency.
  • Compact Design: Surface-mount package enables compact circuit layouts.
  • Reliable Performance: Avalanche rating ensures robust performance in transient conditions.
  • Simplified Circuit Design: Low gate charge eases gate drive requirements.
  • Versatile Applications: Suitable for a broad range of power management tasks.

Additional Details:

The STS8215 is characterized by specific electrical parameters, including maximum drain-source voltage (VDS), continuous drain current (ID), and gate-source voltage (VGS). The precise values are detailed in the official datasheet. Engineers should consult the datasheet for accurate electrical characteristics, thermal resistance, and package dimensions before integrating the STS8215 into a design. Proper gate drive voltage and thermal management are essential for achieving optimal performance and preventing device failure. The component is typically provided in tape and reel packaging for efficient automated assembly processes.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,910 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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