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K4B2G0846Q-HYK0

Part No K4B2G0846Q-HYK0
Manufacturer Samsung
Catalog DDR
Description DDR3-1600 256Mx8 (2Gb) 1.35V
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 941229-K4B2G0846Q-HYK0
Series *
Ultra Librarian 3D Model Ultra Librarian K4B2G0846Q-HYK0 CAD Model

Description

The Samsung K4B2G0846Q-HYK0 is a high-performance DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component. This memory chip is designed by Samsung to provide a balance of speed, capacity, and energy efficiency for a wide range of applications. It's a crucial component in systems needing efficient data handling and low latency.

Applications:

  • Desktop PCs and Laptops: Used as system memory to improve performance in everyday computing tasks and demanding applications.
  • Gaming Consoles: Employed to support high-resolution graphics and complex game logic, enhancing the gaming experience.
  • Networking Devices: Utilized in routers, switches, and other networking equipment to manage data traffic and improve network performance.
  • Smart TVs: Integrated into smart TVs to enable smooth streaming, application performance, and multitasking.
  • Embedded Systems: Found in various embedded systems requiring fast and reliable memory, such as industrial control systems and automotive electronics.

Features:

  • High-Speed Data Transfer: Offers fast data transfer rates, enabling quick access to memory and improved system responsiveness.
  • Low Power Consumption: Designed to operate at a low voltage, reducing power consumption and heat generation.
  • Double Data Rate (DDR) Technology: Transfers data on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate.
  • High Density: Provides a significant amount of memory in a compact package, allowing for efficient use of space.
  • Advanced Packaging: Uses advanced packaging techniques to ensure reliable performance and longevity.

Benefits:

  • Improved System Performance: Enhances the overall speed and responsiveness of computer systems and applications.
  • Increased Multitasking Capability: Allows users to run multiple applications simultaneously without experiencing performance slowdowns.
  • Enhanced Gaming Experience: Provides smoother gameplay and faster loading times in gaming applications.
  • Greater System Stability: Ensures reliable operation and reduces the risk of system crashes and data loss.
  • Extended Battery Life: Low power consumption contributes to longer battery life in portable devices like laptops.

Additional Details:

The K4B2G0846Q-HYK0 conforms to the JEDEC standards for DDR3 SDRAM. The specific operating frequency, timings, and voltage requirements can be found in the official Samsung datasheet for this specific part number. This memory chip is built with high-quality materials and undergoes rigorous testing to ensure reliability and performance.

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