The Samsung K4B4G1646E-BINB is a 4Gb DDR3 SDRAM chip. This component is designed for high-performance memory applications that demand rapid data transfer and minimal latency. This particular model is organized as 256M x 16, signifying a density of 4 Gigabits and a data width of 16 bits.

Applications

• Desktop and Laptop Computers: As main system memory to accelerate application responsiveness and system-wide efficiency.
• Gaming Consoles: Delivers the high memory bandwidth necessary for rendering intricate graphics and managing real-time game data.
• Networking Devices: Used in routers, switches, and similar equipment for packet processing and data buffering.
• Embedded Systems: Integrated into systems needing high-speed memory, such as industrial controllers and automotive systems.
• Graphics Processing Units (GPUs): Deployed as video memory to hold textures, frame buffers, and other graphical data.

Features

• High Bandwidth: DDR3 technology provides fast data rates, improving overall system responsiveness.
• Low Power Consumption: Optimized for energy efficiency, reducing power usage in portable devices and extending battery life.
• 256M x 16 Organization: Offers a balanced memory density and data access rate.
• Lead-Free and Halogen-Free: Conforms to environmental regulations, making it eco-friendly.
• Advanced Architecture: Incorporates sophisticated memory cell design and fabrication methods for superior reliability and performance.

Benefits

• Improved System Performance: Quick data retrieval results in faster application load times and smoother multitasking.
• Superior Gaming Experience: Enhanced memory bandwidth facilitates more detailed visuals and fluid gameplay.
• Increased Energy Efficiency: Low power demands minimize heat production and extend battery duration in portable devices.
• Enhanced System Stability: Reliable memory parts promote a more stable and dependable system.
• Broad Compatibility: DDR3 SDRAM remains a broadly supported memory technology, ensuring compatibility with diverse systems.

Additional Details

The DDR3 SDRAM component operates at standard DDR3 voltages, typically around 1.5V. It supports various DDR3 speed grades as dictated by system needs. Essential timing parameters such as CAS latency (CL), RAS to CAS delay (tRCD), and RAS precharge time (tRP) are contingent upon the specific speed grade. The general operating temperature range is from 0°C to 85°C. For comprehensive details, consult the Samsung datasheet for the K4B4G1646E-BINB.