The Samsung K4H511638B-TCB0 is a 512Mb DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) component. This memory chip is engineered to deliver high bandwidth and efficient data transfer rates, making it suitable for a wide array of applications. It is manufactured by Samsung, a recognized leader in memory technology.

Applications

• Graphics cards
• Gaming consoles
• Networking equipment
• High-performance computing
• Embedded systems with substantial memory needs

Features

• Density: 512Mb (32M x 16)
• Organization: Configured as 32M x 16 bits
• Interface: DDR (Double Data Rate)
• Clock Frequency: Adheres to JEDEC standards for DDR SDRAM
• Data Rate: Up to [Specific Data Rate, e.g., 400 Mbps, if available, otherwise omit]
• Voltage: Typically operates at 2.5V
• Package: [Specify Package type, e.g., FBGA, if available, otherwise omit]
• Operating Temperature: [Specify Temperature Range, if available, otherwise omit]

Benefits

• High Bandwidth: Provides rapid data transfer, boosting system performance.
• Enhanced Performance: Minimizes latency with high-speed memory access for improved responsiveness.
• Power Efficiency: Designed for minimal power consumption, making it ideal for energy-conscious applications.
• Dependable Operation: Samsung’s advanced manufacturing ensures reliable and stable performance.
• Compact Design: [Mention if package is compact, e.g., FBGA for space-saving implementations, if available, otherwise omit]

Additional Details

The K4H511638B-TCB0 conforms to JEDEC specifications for DDR SDRAM. Refer to the official Samsung datasheet for specific timing parameters and operating conditions. It is well-suited for applications requiring dependable and high-throughput memory.