The K4S283233F-ME/N1L is a high-performance 128Mb SDRAM (Synchronous Dynamic Random Access Memory) from Samsung. It's designed for applications requiring high bandwidth and low latency, commonly found in graphics cards, networking devices, and embedded systems.

Applications

• Graphics cards: Used as video memory for rendering images and textures.
• Networking devices: Employed in routers and switches for packet buffering and processing.
• Embedded systems: Found in various embedded applications needing high-speed memory.
• Printers: Buffer memory for image processing and queuing print jobs
• Consumer electronics: Utilized in set-top boxes and digital TVs.

Features

• 128Mb memory density
• Synchronous operation, meaning all operations are synchronized to a clock signal.
• Data rate up to 200 MHz
• Programmable burst length (1, 2, 4, 8, or full page)
• Auto precharge and auto refresh modes
• Single 3.3V power supply
• LVTTL compatible inputs and outputs
• Lead-free packaging

Benefits

• High bandwidth: Enables fast data transfer rates, improving system performance.
• Low latency: Reduces access times, resulting in quicker response times.
• Low power consumption: Minimizes energy usage, making it suitable for battery-powered devices.
• Cost-effective: Provides a balance of performance and price.
• Reliable: Samsung is a reputable manufacturer known for producing high-quality memory chips.

Technical Specifications

The K4S283233F-ME/N1L operates at a clock frequency of up to 200 MHz. It supports various burst modes and refresh modes, allowing for flexible memory management. The device is packaged in a 54-pin TSOP (Thin Small Outline Package). It has an operating temperature range suitable for commercial applications.