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K4T1G084QF-BCE6000

Part No K4T1G084QF-BCE6000
Manufacturer Samsung
Description 1Gb F-die DDR2 SDRAM
Sample
Rohs State rohs
ECAD Module
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Manufacturer Samsung
Win Source Part Number 1191964-K4T1G084QF-BCE6000
Manufacturer Homepage www.samsung.com/Products/Semiconductor
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian K4T1G084QF-BCE6000 CAD Model

Description

The K4T1G084QF-BCE6000 is a 1Gbit DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) chip manufactured by Samsung. It is designed for high-performance memory applications requiring fast data transfer rates and low power consumption. This device is commonly used in computers, laptops, and other electronic devices that require substantial memory capacity and speed.

Applications:

  • Desktop computers
  • Laptop computers
  • Graphics cards
  • Gaming consoles
  • Networking equipment

Features:

  • 1Gbit Density: Provides a large memory capacity for demanding applications.
  • DDR3 Technology: Offers high data transfer rates compared to previous generations of SDRAM.
  • Operating Frequency: Up to 800 MHz (DDR3-1600)
  • Low Power Consumption: Reduces power consumption, extending battery life in portable devices.
  • 8-bit Data Width: Allows for efficient data transfer.
  • Internal Calibration: Ensures stable and reliable operation over a wide range of temperatures and voltages.
  • Lead-Free Package: Complies with environmental regulations.

Benefits:

  • High Performance: Improves system performance with fast data transfer rates.
  • Low Power: Reduces power consumption, extending battery life in portable devices.
  • Large Capacity: Provides ample memory for demanding applications.
  • Reliable Operation: Ensures stable and reliable performance.
  • Environmentally Friendly: Complies with environmental regulations.

The K4T1G084QF-BCE6000 functions as a high-speed memory module, storing and retrieving data quickly and efficiently. It operates by synchronizing data transfers with the system clock, enabling high data transfer rates. The low power consumption and internal calibration features ensure stable and reliable operation under various conditions. The large memory capacity makes it suitable for applications requiring substantial memory resources.

Specifications:

  • Operating Voltage: 1.5V
  • Operating Temperature: 0°C to +85°C
  • Data Rate: 1600 Mbps
  • Organization: 128M x 8
  • Package: FBGA (Fine-Pitch Ball Grid Array)

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