The K9K2G08R0A-JIB0 is a 2Gbit (256M x 8 bit) NAND Flash memory device manufactured by Samsung. It is designed for high-density, non-volatile storage applications commonly found in consumer electronics, embedded systems, and data storage devices.

Applications:

• Solid State Drives (SSDs)
• USB Flash Drives
• Memory Cards (SD, microSD)
• Embedded Systems
• Digital Cameras
• Mobile Devices

Features:

• Capacity: 2Gbit (256M x 8 bit)
• Supply Voltage: 2.7V ~ 3.6V
• Page Size: (512 + 16) Bytes
• Block Size: (16K + 512) Bytes
• Data Retention: 10 Years
• Endurance: 100,000 Program/Erase Cycles
• Operating Temperature: -25°C to +85°C
• RoHS Compliant

Benefits:

• High storage density in a compact form factor
• Fast read and write performance
• Low power consumption
• High reliability and endurance
• Cost-effective storage solution
• Suitable for a wide range of operating conditions

Technical Specifications:

The K9K2G08R0A-JIB0 features a page size of 528 bytes (512 + 16) and a block size of 16896 bytes (16K + 512). It operates within a voltage range of 2.7V to 3.6V. This NAND Flash memory chip provides a reliable and efficient storage solution for a wide range of applications.

With its high density, fast performance, and low power consumption, this memory chip is suitable for various storage applications requiring reliable data retention and high endurance.