The Samsung KM41C4000CJ-6 is a 4,194,304-bit Dynamic RAM (DRAM) organized as 4,194,304 words by 1 bit. This DRAM is suited for applications needing larger memory capacity with a focus on faster access.

Applications:

• Computer memory modules
• High-performance graphics cards
• Embedded systems with significant memory requirements
• Network equipment
• Industrial control systems

Features:

• Capacity: 4,194,304 bits (4Mbit)
• Organization: 4,194,304 x 1 bit
• Access time: 60ns (inferred from part number suffix -6)
• Single 5V power supply
• TTL compatible inputs and outputs
• Refresh: 2048 cycle/32ms
• Package: DIP (Dual In-line Package) or equivalent

Benefits:

• Larger memory capacity enables more complex applications
• Faster access times improve overall system responsiveness
• Standard interface simplifies integration into various systems
• Cost-effective solution for high-density memory requirements
• Industry-standard packaging for ease of assembly

Additional Details:

The KM41C4000CJ-6 utilizes dynamic storage cells, necessitating periodic refresh cycles to preserve stored data. These refresh operations are generally managed by external memory controllers or dedicated refresh circuitry. The device operates from a single 5V power supply and offers TTL-compatible inputs and outputs for streamlined integration with other digital components. Its 60ns access time allows for quick data retrieval. The 2048 cycle/32ms refresh rate ensures data retention. The packaging is likely a standard DIP or a compatible package for easy soldering and insertion.