The KSR2007 is a PNP epitaxial silicon transistor produced by Samsung. It is designed for use in medium power switching and amplifier applications.

Applications

• Medium power switching circuits
• Amplifier circuits
• General purpose switching
• Driver stages in audio amplifiers

Features

• High Collector Current (Ic = -1.5A)
• Low Saturation Voltage
• High Transition Frequency (fT = 100 MHz Typical)
• Excellent hFE Linearity
• Pb Free/RoHS Compliant

Benefits

• Improved Switching Performance
• Efficient Power Amplification
• Reduced Power Dissipation
• Extended Battery Life in Portable Applications
• Environmentally Friendly due to Pb-Free and RoHS Compliance

Technical Specifications

The KSR2007 features a collector-base voltage (VCBO) of -60V, a collector-emitter voltage (VCEO) of -50V, and an emitter-base voltage (VEBO) of -6V. The collector current (IC) is rated at -1.5A, and the peak collector current (ICM) is -3A. The power dissipation (PC) is 1W. The operating and storage junction temperature range is -55 to +150 degrees Celsius. It is typically packaged in a TO-126 package.

The transistor's gain (hFE) typically ranges from 100 to 320, dependent on the collector current and temperature. Its transition frequency allows it to function effectively in high-speed switching circuits.

The KSR2007 is a suitable choice for applications where moderate power amplification or switching is required, offering a balance of performance and cost-effectiveness.