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2SD2014 Real Image
Same model may have multiple batches, images only for reference.

2SD2014

Part No 2SD2014
Manufacturer Sanken
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 80V 4A TO220F
Datasheet
2SD2014 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Sanken
Packaging Bulk
Status Active
Transistor Polarity NPN - Darlington
Maximum Current Collector 4A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 1.5V @ 3mA, 3A
Collector Cut-off Current(Max) 10μA (ICBO)
Typical Gain (hFE) (Min) 2000 @ 3A, 2V
Maximum Power Dissipation 25W
Frequency - Transition 75MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Win Source Part Number 1004580-2SD2014
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SD2014 CAD Model

Description

The 2SD2014 is a NPN - Darlington transistor with a maximum collector-emitter breakdown voltage of 80V and a maximum current collector of 4A.

  • Frequency Transition: 75MHz
  • Mounting: Through Hole
  • Case/Package: TO-220F
  • Temperature Range: 150°C (TJ)
  • Maximum Power Dissipation: 25W
  • Collector Cut-off Current (Max): 10μA (ICBO)
  • Typical Gain (hFE) (Min): 2000 @ 3A, 2V
  • Maximum Vce (sat): 1.5V @ 3mA, 3A
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Supply and Demand Status: Balanced

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