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2SD1623

Part No 2SD1623
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Catalog Hard To Find
Description High-Current Switching Applications
Sample
Rohs State rohs
ECAD Module
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Manufacturer SANYO Semiconductor (U.S.A) Corporation
Win Source Part Number 1126278-2SD1623
Manufacturer Homepage www.ssdc-jp.com/eng/
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SD1623 CAD Model

Description

The 2SD1623 is a silicon NPN power transistor manufactured by SANYO Semiconductor. This transistor is designed for power amplification and switching applications in various electronic devices. Its high collector current and voltage ratings make it suitable for controlling and driving high-power loads. The device offers reliable performance in demanding operating conditions.

Typical Applications:

  • Power Amplifiers in audio systems and sound equipment.
  • Switching Regulators in power supplies for electronic devices.
  • DC-DC Converters in automotive and industrial applications.
  • Motor Drivers for controlling small and medium-sized electric motors.
  • Inverters for converting DC power to AC power in various applications.

Key Features:

  • High Collector Current (IC): Up to 3A, allowing for high-power output.
  • High Collector-Emitter Voltage (VCEO): Up to 100V, providing robustness against voltage spikes.
  • Low Saturation Voltage (VCE(sat)): Minimizes power dissipation and improves efficiency.
  • Fast Switching Speed: Suitable for use in high-frequency switching circuits.
  • NPN Silicon Transistor: Ensures consistent and dependable performance.

Benefits:

  • Enhanced power amplification capabilities in audio and RF circuits.
  • Improved efficiency in switching power supplies and converters.
  • Increased reliability in high-voltage and high-current applications.
  • Reduced heat generation due to low saturation voltage.
  • Stable and predictable performance in demanding environments.

Additional Details:

The 2SD1623 is commonly employed in applications requiring efficient power control and amplification. It typically operates with a base-emitter voltage (VBE) of around 1.5V and a power dissipation (PD) of approximately 25W. Proper heat sinking is necessary to prevent overheating and ensure the long-term reliability of the transistor. The device is often available in a TO-220 package, which facilitates easy mounting and efficient heat dissipation. This transistor is suitable for use in a wide array of electronic devices, including audio amplifiers, power inverters, and motor control systems. Careful circuit design and proper biasing are essential to optimize performance and prevent damage to the transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,955+ $0.0296 $57.8680
4,170+ $0.0277 $115.5090
6,470+ $0.0268 $173.3960
9,305+ $0.0249 $231.6945
12,080+ $0.0239 $288.7120
15,080+ $0.0230 $346.8400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 1955 pcs
Order Increment : 1 pcs
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