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Same model may have multiple batches, images only for reference.
FW231A-TL-E SANYO Semiconductor (U.S.A) Corporation
Same model may have multiple batches, images only for reference.

FW231A-TL-E

Part No FW231A-TL-E
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 8A 8-SOP
Datasheet
FW231A-TL-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Packaging Cut Reel
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 23 mOhm @ 8A, 4.5V
Max Gate Charge 21nC @ 4.5V
Max Input Capacitance 1530pF @ 10V
Maximum Power Dissipation 2.3W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 016570-FW231A-TL-E
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FW231A-TL-E CAD Model

Description

The SANYO Semiconductor (U.S.A) Corporation 016570-FW231A-TL-E is a dual N-channel logic level gate FET.

  • Package: 8-SOP
  • Mounting Technology: SMD (SMT)
  • Status: Obsolete (EOL)
  • Maximum Power Dissipation: 2.3W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 8A @ 25°C
  • Maximum Rds On: 23 mOhm @ 8A, 4.5V
  • Maximum Gate Charge: 21nC @ 4.5V
  • Maximum Input Capacitance: 1530pF @ 10V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5111 $58.7765
280+ $0.4194 $117.4320
430+ $0.4063 $174.7090
590+ $0.3932 $231.9880
760+ $0.3801 $288.8760
1,020+ $0.3407 $347.5140
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Availability: 10,800 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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