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PCP1201-TD-E

Part No PCP1201-TD-E
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Catalog RF Transistors (BJT)
Description Trans GP BJT NPN 120V 2.5A 1300mW 4-Pin(3+Tab) SOT-89
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-89
Collector Emitter Breakdown Voltage 120 V
Lead Free Yes
Max Power Dissipation 3.5 W
Number of Pins 3
Polarity NPN
RoHS Compliant
Transition Frequency 130 MHz
Win Source Part Number 993454-PCP1201-TD-E
Categories RF Transistors(BJT)
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian PCP1201-TD-E CAD Model

Description

The SANYO Semiconductor (U.S.A) Corporation PCP1201-TD-E is a NPN RF transistor designed for use in electronic devices that require RF transistors.

  • Max Power Dissipation: 3.5 W
  • Collector-Emitter Breakdown Voltage: 120 V
  • Transition Frequency: 130 MHz
  • The PCP1201-TD-E is packaged in a SOT-89 case.
  • This RF transistor is ideal for use in electronic devices that require RF transistors due to its high collector-emitter breakdown voltage and transition frequency.

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