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BSM50GD120DN2

Part No BSM50GD120DN2
Manufacturer Siemens
Catalog END - OF - LIFE
Description IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Siemens
Win Source Part Number 1154779-BSM50GD120DN2
Manufacturer Homepage www.siemens.com/
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSM50GD120DN2 CAD Model

Description

The BSM50GD120DN2 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Siemens (now Infineon Technologies). It is designed for high-power switching applications. IGBT modules combine the advantages of MOSFETs and bipolar transistors, offering high input impedance and high current-carrying capabilities. This particular module is part of their ECONODUAL™ package family.

Applications:

  • Inverter drives: Used in variable frequency drives (VFDs) for controlling AC motors.
  • Power supplies: Utilized in high-power switched-mode power supplies (SMPS).
  • Welding equipment: Employed in inverter-based welding machines.
  • Uninterruptible power supplies (UPS): Provides reliable power backup in critical systems.
  • Renewable energy systems: Used in solar inverters and wind turbine converters.

Features:

  • IGBT technology: Combines MOSFET and bipolar transistor characteristics.
  • High current capability: Handles high current loads with ease.
  • High voltage rating: Operates at high DC bus voltages.
  • Low saturation voltage: Minimizes power losses and improves efficiency.
  • Integrated free-wheeling diodes: Provides commutation paths for inductive loads.

Benefits:

  • High efficiency: Low saturation voltage reduces power dissipation.
  • Reliable operation: Robust design ensures dependable performance in demanding applications.
  • Simplified design: Integrated diodes simplify circuit design and reduce component count.
  • Compact size: Module package allows for high power density.

Additional Details:

The BSM50GD120DN2 typically features a collector-emitter voltage (VCES) rating of 1200V and a collector current (IC) rating of around 50A. The module's low saturation voltage contributes to its high efficiency. The integrated free-wheeling diodes are essential for handling the inductive kickback voltage generated when switching inductive loads. The ECONODUAL™ package provides excellent thermal performance and easy mounting. Consult the Infineon datasheet for specific electrical characteristics, thermal impedance data, and application notes. As it is marked END-OF-LIFE, verify availability before design implementation.

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