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BUZ81

Part No BUZ81
Manufacturer Siemens
Catalog END - OF - LIFE
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Siemens
Win Source Part Number 1156494-BUZ81
Manufacturer Homepage www.siemens.com/
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BUZ81 CAD Model

Description

The BUZ81 is an N-channel enhancement mode power MOSFET from Siemens. Although designated as END-OF-LIFE, understanding its characteristics is crucial for legacy system maintenance and potential replacement considerations. This power MOSFET was designed for high-speed switching applications and is known for its robust performance in demanding environments.

Applications

  • Switching Power Supplies: Commonly used in SMPS circuits for efficient power conversion.
  • Motor Control: Suitable for driving and controlling DC motors in various industrial applications.
  • DC-DC Converters: Used to step-up or step-down voltage levels in electronic circuits.
  • Inverters: Applicable in inverter circuits for converting DC power to AC power.
  • Lighting Systems: Used in electronic ballasts and dimming circuits.

Features

  • N-Channel Enhancement Mode: Simplifies gate drive requirements.
  • High Switching Speed: Enables efficient operation in high-frequency applications.
  • Low On-Resistance (RDS(on)): Minimizes power losses and improves efficiency.
  • High Avalanche Energy: Offers robustness against voltage transients.
  • Isolated Mounting Tab: Facilitates easy mounting and thermal management.

Benefits

  • Improved Efficiency: Low on-resistance reduces power dissipation, leading to higher efficiency.
  • Enhanced Reliability: High avalanche energy ensures reliable operation under transient conditions.
  • Simplified Design: N-channel enhancement mode simplifies gate drive circuitry.
  • Compact Size: Allows for compact and space-saving designs.
  • Robust Performance: Designed for demanding applications requiring high switching speeds and reliability.

Additional Details

The BUZ81 typically features a drain-source voltage (VDS) rating of around 500V and a continuous drain current (ID) rating dependent on the specific package and operating conditions. The gate threshold voltage (VGS(th)) is typically between 2V and 4V. It is essential to consult the original datasheet for precise specifications, as parameters can vary. Its fast switching capabilities make it suitable for PWM (Pulse Width Modulation) applications. The package type commonly used for BUZ81 is TO-220.

When considering replacements for the BUZ81 due to its end-of-life status, it's important to match key specifications such as VDS, ID, RDS(on), and gate charge (Qg) to ensure equivalent or improved performance in the target application. Devices from other manufacturers with similar specifications can serve as suitable alternatives.

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