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SVF2N60F

Part No SVF2N60F
Manufacturer Silan
Catalog HOT - SALES and EOL Components (S)
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Manufacturer Silan
Win Source Part Number 349531-SVF2N60F
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SVF2N60F CAD Model

Description

The SVF2N60F is a high-voltage N-channel MOSFET manufactured by Silan Microelectronics. It's designed for high-efficiency switching applications. It features a fast switching speed and low on-resistance, contributing to reduced power loss and improved efficiency in various power electronic circuits.

Applications:

  • Switching Power Supplies
  • PWM Motor Controls
  • High-Efficiency DC-DC Converters
  • Uninterruptible Power Supplies (UPS)
  • Electronic Ballasts for Lighting

Features:

  • High Voltage: VDSS = 600V
  • Low On-Resistance: RDS(on) = Typically around 4 Ohms (check datasheet for specific value at specified VGS and ID)
  • Fast Switching Speed: Reduces switching losses
  • Avalanche Energy Rated: Ensures ruggedness and reliability
  • Improved dv/dt Capability: Enhances noise immunity
  • TO-220F Package: Provides good thermal performance and easy mounting

Benefits:

  • High Efficiency: The low on-resistance minimizes conduction losses, leading to higher energy efficiency.
  • Reliable Operation: The avalanche energy rating ensures the device can withstand transient voltage spikes, enhancing reliability.
  • Simplified Design: The fast switching speed allows for simpler gate drive circuits and reduces the need for complex snubbers.
  • Reduced Heat Dissipation: Lower on-resistance and faster switching reduce power dissipation, simplifying thermal management.
  • Compact Solution: The TO-220F package allows for a compact design with good heat dissipation capabilities.

Additional Details:

The SVF2N60F's 600V drain-source voltage rating makes it suitable for off-line power supplies and other high-voltage applications. The gate threshold voltage (VGS(th)) is typically between 2V and 4V. It's crucial to consult the device's datasheet for the precise RDS(on) value at specific gate-source voltage (VGS) and drain current (ID) conditions. The maximum drain current (ID) rating will also be detailed in the datasheet. Ensure appropriate gate drive circuitry is used to achieve optimal switching performance. The TO-220F package provides electrical isolation from the mounting surface, simplifying heat sink attachment. It is important to operate the device within its specified maximum ratings for voltage, current, and temperature to ensure long-term reliability. Proper heat sinking is essential to keep the junction temperature within acceptable limits. Consider using a gate resistor to dampen oscillations and further improve switching performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
390+ $0.1290 $50.3100
830+ $0.1207 $100.1810
1,290+ $0.1166 $150.4140
1,850+ $0.1082 $200.1700
2,405+ $0.1041 $250.3605
3,005+ $0.0999 $300.1995
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 130,000 pieces
MOQ: 390 pcs
Order Increment : 1 pcs
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