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IRF610L

Part No IRF610L
Manufacturer Siliconix
Catalog Discrete Semiconductor Products
Description MOSFET N-CH 200V 3.3A TO262
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs
Mfr Vishay Siliconix
Packaging Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
Power Dissipation (Max) 3W (Ta), 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number IRF610
Ultra Librarian 3D Model Ultra Librarian IRF610L CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4090 $51.1250
300+ $0.3356 $100.6800
465+ $0.3252 $151.2180
640+ $0.3147 $201.4080
825+ $0.3042 $250.9650
1,105+ $0.2727 $301.3335
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,999 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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