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2N5583

Part No 2N5583
Manufacturer Solid State Inc.
Catalog RF Transistors (BJT)
Description PNP SIL RF  TO39 / RF Transistor PNP 30V 500mA 1.3GHz 1W Through Hole TO-39
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Solid State Inc.
Package Box
Product Status Active
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 30V
Frequency - Transition 1.3GHz
Power - Max 1W
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 100mA, 2V
Current - Collector (Ic) (Max) 500mA
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
Standard Package 10 pcs
MSL Level Not Applicable
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 10250-2N5583
Ultra Librarian 3D Model Ultra Librarian 2N5583 CAD Model

Description

2N5583 Description

The 2N5583 is a high-voltage, high-frequency N-channel JFET, designed to deliver superior performance in applications that demand high-speed and high-voltage operation.

Applications

  • High-frequency amplifiers
  • RF mixers
  • Fast-switching circuits
  • Telecommunications equipment

Features and Benefits

  • High voltage tolerance, accommodating demanding circuits
  • Rapid switching speed, improving circuit efficiency
  • High-frequency performance, ideal for RF applications
  • Robust design, ensuring long-term reliability

The 2N5583's high-performance capabilities make it particularly well-suited for high-tech, precision-oriented projects where reliability and efficiency are crucial.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $7.1734 $64.5606
20+ $5.8859 $117.7180
31+ $5.7020 $176.7620
42+ $5.5181 $231.7602
55+ $5.3342 $293.3810
73+ $4.7823 $349.1079
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 67 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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