The S29GL256N11FFI010 is a 256 Mbit (32 M x 8-bit/16 M x 16-bit) CMOS 3.0 Volt-only simultaneous Read/Write, Flash memory device manufactured by Spansion. It is designed for embedded systems requiring high density, high performance and robust data retention.

Applications

• Embedded Systems
• Automotive Applications (Navigation Systems, Instrument Clusters)
• Industrial Control Systems
• Networking Equipment

Features

• Simultaneous Read/Write Operations: Allows concurrent read and write operations for enhanced system performance.
• 3.0 Volt-Only Operation: Simplifies power supply design and reduces system cost.
• High Performance: Offers fast read access times.
• Low Power Consumption: Reduces power consumption in battery-powered applications.
• Robust Data Retention: Ensures data integrity for extended periods.
• Sector Protection: Prevents accidental programming or erasure of critical data.

Benefits

• Increased System Throughput: Simultaneous read/write capabilities improve overall system responsiveness.
• Simplified Design: 3.0 Volt-only operation simplifies power supply design.
• Extended Battery Life: Low power consumption extends battery life in portable devices.
• Reliable Data Storage: Guarantees data integrity even in harsh environments.
• Enhanced Data Security: Sector protection safeguards critical data from corruption.

Technical Specifications

• Density: 256 Mbit (32 M x 8-bit/16 M x 16-bit)
• Voltage: 3.0V
• Access Time: Typically 110ns
• Operating Current: Depends on read/write activity.
• Standby Current: Typically in the microampere range.
• Erase/Program Cycles: Typically 100,000 cycles per sector.
• Data Retention: 20 years.
• Package: Typically available in FBGA or TSOP packages.

The S29GL256N11FFI010 is a suitable choice for embedded systems requiring large storage capacity and high performance. Refer to the official datasheet for detailed specifications and application guidelines.