The M29W400DT55N6F is a high-performance 4 Mbit (512Kb x8 or 256Kb x16) non-volatile flash memory component from STMicroelectronics, a leader in the semiconductor industry. This device operates at a supply voltage range of 2.7V to 3.6V, making it suitable for low-power applications.

Key Features

• Memory Size: 4 Mbit with flexible block sizes for program/erase operations
• Memory Organization: The memory array is organized either as 512K bytes or 256K words, providing versatility for different application requirements.
• Access Time: Fast access time of 55 ns, enabling high-speed read operations which are crucial for performance-critical applications.
• Program/Erase Cycles: Offers a minimum of 100,000 program/erase cycles, ensuring reliability and longevity for the memory storage.
• Operating Temperature Range: Designed to function across a wide temperature range from -40°C to +85°C, making it robust for industrial applications.
• Low Power Consumption: Features low power consumption with standby and automatic power-saving modes, which are ideal for battery-powered devices.
• Compatibility: This device is boot block compatible, supporting both top and bottom boot blocks for flexible system design.

Applications

The M29W400DT55N6F is designed for a wide range of applications that require high-density, non-volatile memory storage. Its robustness and reliability make it an excellent choice for:

• Embedded systems
• Automotive electronics
• Telecommunication devices
• Industrial control systems
• Consumer electronics

Quality and Support

STMicroelectronics is committed to delivering high-quality products. The M29W400DT55N6F is supported by ST's reliability and longevity commitment, ensuring that it meets the stringent requirements of the industry for performance and durability. Customers can also benefit from ST's extensive technical support and documentation, simplifying the design-in process and reducing time to market.