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NAND01GW3B2AZA6E

Part No NAND01GW3B2AZA6E
Manufacturer STMicroelectronics
Catalog Flash
Description IC FLASH 1GBIT 50NS 63VFBGA / NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 63-Pin VFBGA Tray
Datasheet
Sample
Rohs State rohs
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Categories Integrated Circuits (ICs)
Manufacturer STMicroelectronics
Packaging Tray
Part Status Obsolete(EOL)
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 1Gb (128M x 8)
Write Cycle Time - Word, Page 30ns
Access Time 30ns
Memory Interface Parallel
Operating Supply Voltage 2.7 V ~ 3.6 V
Operating Temperature Range -40°C ~ 85°C (TA)
Mounting SMD
Package 63-TFBGA
Manufacturer Package 63-VFBGA (9x11)
Win Source Part Number 790494-NAND01GW3B2AZA6E
Popularity Medium
Supply and Demand Status Limited
Family Name NAND01GW3B
Introduction Date February 10, 2004
ECCN 3A991.b.1.a
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian NAND01GW3B2AZA6E CAD Model

Description

Introducing the NAND01GW3B2AZA6E from STMicroelectronics

The NAND01GW3B2AZA6E is a cutting-edge NAND Flash memory product designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative approach to integrated circuit design. This particular product is part of their large-scale integration (LSI) family, offering high-density data storage solutions that are both reliable and efficient for a wide range of applications.

With a storage capacity of 1 Gbit, the NAND01GW3B2AZA6E is an excellent choice for applications that require substantial data storage without compromising on performance. The device operates on a supply voltage ranging from 2.7V to 3.6V, making it compatible with a variety of electronic systems and ensuring energy-efficient operation.

The NAND Flash memory chip is organized as (2048+64) bytes x 64 pages x 1024 blocks, providing a flexible and manageable structure for data organization and retrieval. The memory array is capable of withstanding a minimum of 100,000 program/erase cycles, which guarantees longevity and durability for applications that demand consistent performance over time.

The NAND01GW3B2AZA6E also features an impressive page read/write speed, allowing for rapid access to stored data. This makes it an ideal component for use in multimedia devices, digital cameras, and other consumer electronics where quick data transfer is essential. Additionally, the chip supports a synchronous read mode, further enhancing its performance capabilities.

STMicroelectronics has equipped the NAND01GW3B2AZA6E with advanced error correction code (ECC) capabilities, ensuring data integrity and reducing the likelihood of data corruption. This is particularly important in systems where data reliability is critical, such as in industrial control units, medical devices, and automotive electronics.

For ease of integration, the NAND01GW3B2AZA6E comes in a fine-pitch ball grid array (FBGA) package. This compact packaging not only saves space on printed circuit boards (PCBs) but also provides robust connectivity and improved thermal performance.

Overall, the NAND01GW3B2AZA6E from STMicroelectronics is a top-tier NAND Flash memory solution that offers a perfect blend of capacity, speed, and reliability for designers and engineers looking to enhance their data storage systems.

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Quantity Unit Price Ext. Price
5+ $12.6888 $63.4440
12+ $10.4113 $124.9356
18+ $10.0859 $181.5462
24+ $9.7606 $234.2544
31+ $9.4353 $292.4943
41+ $8.4592 $346.8272
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