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P4NK60ZFP

Part No P4NK60ZFP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 510pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 061002-P4NK60ZFP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian P4NK60ZFP CAD Model

Description

The STMicroelectronics P4NK60ZFP is a high-performance N-Channel MOSFET designed to deliver efficiency and reliability for a wide range of applications. This power MOSFET is part of STMicroelectronics' STP series, which is renowned for its excellent RDS(on) and superior switching performance. The P4NK60ZFP is particularly suited for high power density and power conversion applications, including switch-mode power supplies (SMPS), lighting, DC-AC converters, and motor control circuits.

Key Features:

  • Low On-Resistance: The P4NK60ZFP boasts a very low on-state resistance (RDS(on)) which minimizes conduction losses and enhances overall efficiency.
  • High Voltage Capability: With a drain-source voltage (VDS) of 600V, this MOSFET can handle high voltage applications with ease, making it ideal for industrial and power management systems.
  • High Current Handling: The continuous drain current (ID) rating of up to 3A allows for significant current flow through the device without compromising performance.
  • Fast Switching Speed: The device features fast switching characteristics which are essential for reducing switching losses and improving the performance of power conversion systems.
  • 100% Avalanche Tested: Ensuring ruggedness and reliability, the P4NK60ZFP is guaranteed to withstand high-energy pulses in the avalanche and commutation modes.
  • Enhanced Body Diode: The intrinsic diode has a low reverse recovery time, which is critical for high-efficiency switching and reduced noise levels.

Applications:

The versatility of the P4NK60ZFP makes it suitable for a diverse array of applications. It is commonly used in:

  • Power supply units
  • LED lighting systems
  • AC-DC converters
  • DC-AC inverters
  • Motor drives and controls
  • Power management solutions

Package Information:

The P4NK60ZFP comes in a TO-220FP package, which is designed for through-hole mounting. This package offers good thermal and electrical characteristics, making it suitable for commercial-grade devices that require robustness and extended operational lifetimes.

With its combination of performance, efficiency, and reliability, the STMicroelectronics P4NK60ZFP N-Channel MOSFET is an excellent choice for designers looking to optimize their power circuitry across a range of demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.2220 $58.8300
635+ $0.1823 $115.7605
985+ $0.1765 $173.8525
1,355+ $0.1709 $231.5695
1,750+ $0.1652 $289.1000
2,345+ $0.1481 $347.2945
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 266 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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