The STB13N60M2 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, which is renowned for its excellence in semiconductor technology. This device is part of the MDmesh™ M2 series that features state-of-the-art STripFET™ technology, providing superior switching performance and high avalanche ruggedness.

Key Features

• Voltage Rating: The STB13N60M2 is designed to handle continuous voltages up to 600 V, making it suitable for high voltage applications.
• Low On-Resistance: With a typical on-resistance of just 0.280 ohms, this MOSFET ensures high efficiency and low conduction losses.
• Current Capacity: It can deliver a continuous current of 11 A, allowing it to drive sizeable loads with ease.
• Package: Housed in a robust D2PAK package, the STB13N60M2 offers excellent thermal performance and is suitable for compact designs.
• High dV/dt Capability: This device can handle fast switching, with high dV/dt capability, which is essential for reducing switching losses.
• 100% Avalanche Tested: Each unit is guaranteed to withstand high-energy pulses in the avalanche and commutation modes, ensuring reliability and durability.

Applications

The STB13N60M2 is ideal for a wide range of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC-DC Converters
• Motor Control
• Power Factor Correction Circuits
• Welding Equipment

Advantages

This MOSFET leverages STMicroelectronics' advanced MDmesh M2 technology, which combines the benefits of reduced gate charge and lower power dissipation, leading to higher efficiency and thermal performance. Its robust design and reliability make the STB13N60M2 a preferred choice for designers who require a high-performance Power MOSFET that can operate in demanding conditions.

With its superior electrical characteristics and thermal properties, the STB13N60M2 from STMicroelectronics represents a significant advancement in power MOSFET technology, catering to the needs of modern high-efficiency power conversion systems.