STB13NM50N - N-channel 500 V, 0.22 ohm typ., 11 A MDmesh™ II Plus™ low Qg Power MOSFET in D2PAK package

The STB13NM50N is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, designed with the advanced MDmesh™ II Plus™ technology. This innovative device is tailored to achieve high efficiency in a wide range of power applications, notably in switch-mode power supplies (SMPS), lighting, welding, and high-performance drives.

With a drain-source voltage (V<sub>DS) of 500 V, the STB13NM50N offers a robust solution for systems that require high voltage capabilities. The device features an extremely low on-resistance (R<sub>DS(on)) of just 0.22 ohms typical, which significantly reduces conduction losses and improves overall system efficiency. Additionally, the MOSFET is capable of handling a continuous drain current (I<sub>D) of 11 A, making it suitable for high current applications.

The STB13NM50N is packaged in the D2PAK (TO-263), a surface-mount package that provides excellent thermal performance and is compatible with a wide range of PCB designs. This package is designed for easy integration into various circuit layouts, ensuring flexibility for designers and manufacturers.

One of the key features of the STB13NM50N is its low gate charge (Q<sub>g), which enhances the switching performance of the device. This leads to reduced switching losses and allows for faster switching frequencies, which is critical for applications such as resonant converters and high-frequency SMPS.

STMicroelectronics has designed the STB13NM50N with reliability in mind. The MOSFET is 100% avalanche tested, ensuring it can withstand harsh operating conditions and provide a reliable performance over its lifespan. This, combined with its high energy efficiency, makes the STB13NM50N an excellent choice for designers looking to create energy-saving and reliable power solutions.

In summary, the STB13NM50N from STMicroelectronics is a high-performance, N-channel Power MOSFET that offers low on-resistance, high voltage capability, and efficient switching performance. Its robust design and flexible packaging make it an ideal component for a wide range of power applications.