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STB14NM65N

Part No STB14NM65N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 12A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1300pF @ 50V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 125W (Tc)
Rds On (Maximum) @ Id, Vgs 380 mOhm @ 6A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 760445-STB14NM65N
Popularity Medium
Supply and Demand Status Limited
Family Name STB14NM65N
Introduction Date February 15, 2008
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian STB14NM65N CAD Model

Description

The STB14NM65N from STMicroelectronics is a cutting-edge N-channel Power MOSFET that is part of the MDmesh™ DM2 series, which is renowned for its high efficiency in a wide range of applications. This device comes in a robust and reliable D2PAK package, making it suitable for sophisticated power conversion systems.

With a drain-source voltage (V<sub>DS) of 650 V, the STB14NM65N is designed to handle high voltage operations with ease. It boasts a low on-resistance (R<sub>DS(on)) of just 0.19 Ω (typical), which helps to minimize conduction losses and improve overall system efficiency. This feature is particularly beneficial for applications that require high current handling capabilities, as the device can support a continuous drain current (I<sub>D) of 11 A.

One of the key advantages of the STB14NM65N is its MDmesh™ DM2 technology, which combines a vertical structure with a new proprietary diffusion process. This technology enables the MOSFET to achieve low on-resistance and reduced gate charge (Q<sub>g), leading to lower switching losses and better performance in high-frequency circuits.

The device also features a fast recovery diode, which is an essential component for improving the performance of hard switching applications such as Power Factor Correction (PFC) circuits, LED lighting solutions, and switch-mode power supplies (SMPS). The fast recovery diode ensures that the device can switch off quickly and efficiently, further reducing energy losses and enhancing system reliability.

Moreover, the STB14NM65N is characterized by its high dv/dt capability, which ensures robustness against harsh electrical environments and makes it ideal for applications that are exposed to high voltage transients. The device is also 100% avalanche tested, giving designers confidence in its ability to withstand tough conditions.

In summary, the STB14NM65N N-channel Power MOSFET is a high-performance component that offers a combination of high voltage capability, low on-resistance, and high-speed switching. Its advanced features make it an excellent choice for a wide range of power conversion applications where efficiency and reliability are paramount.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $4.0240 $60.3600
35+ $3.3021 $115.5735
55+ $3.1994 $175.9670
75+ $3.0954 $232.1550
97+ $2.9926 $290.2822
130+ $2.6831 $348.8030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,000 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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