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C3M0280090J

Part No C3M0280090J
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 900V 11A D2PAK-7 / N-Channel 900 V 11A (Tc) 50W (Tc) Surface Mount TO-263-7
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Wolfspeed, Inc.
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 360mOhm @ 7.5A, 15V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 15 V
Vgs (Max) +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 600 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package TO-263-7
Case / Package TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number C3M0280090
RoHS Status RoHS Compliant
MSL Level 3 (168 Hours)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1324546-C3M0280090J
Ultra Librarian 3D Model Ultra Librarian C3M0280090J CAD Model

Description

The Wolfspeed, Inc. SiCFET (Silicon Carbide) N-Channel FET is a high-performance transistor with a drain to source voltage (Vdss) of 900 V and a continuous drain current (Id) of 11A (Tc) @ 25°C.

  • Drain to Source Voltage (Vdss): 900 V
  • Continuous Drain Current (Id): 11A (Tc) @ 25°C
  • Maximum Rds On: 360mOhm @ 7.5A, 15V
  • Package: TO-263-7
  • Gate Charge (Qg): 9.5 nC @ 15 V
  • Input Capacitance (Ciss): 150 pF @ 600 V
  • Temperature Range: -55°C to 150°C (TJ)
  • ROHS Compliant: true

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4404 $64.8180
100+ $1.1820 $118.2000
155+ $1.1450 $177.4750
210+ $1.1081 $232.7010
270+ $1.0711 $289.1970
365+ $0.9603 $350.5095
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,550 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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