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STB15NM60N

Part No STB15NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 14A D2PAK  /  N-Channel 600 V 14A (Tc) 125W (Tc) Surface Mount D2PAK
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ II
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 299mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 50 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB15N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-7935-2,497-7935-1,STB15NM60N-ND,497-7935-6
Standard Package 1,000
Win Source Part Number 1024990-STB15NM60N
Ultra Librarian 3D Model Ultra Librarian STB15NM60N CAD Model

Description

STB15NM60N - N-Channel MOSFET by STMicroelectronics

The STB15NM60N is a high-performance N-Channel MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to deliver exceptional efficiency and power density, making it an excellent choice for a wide range of applications, including switch-mode power supplies, power converters, motor drivers, and other high-power switching applications.

With a robust and durable design, the STB15NM60N boasts a drain-source voltage (V<sub>DS) of 600V, which ensures that it can handle high voltage applications with ease. Its continuous drain current (I<sub>D) is rated at 15A, providing the capability to drive significant loads. The device features an R<sub>DS(on) value of 0.29Ω, which is a measure of the MOSFET's on-state resistance. This low on-resistance means that the MOSFET will generate less heat during operation, leading to increased reliability and a longer lifespan.

The STB15NM60N also incorporates STMicroelectronics' revolutionary MDmesh™ technology. This technology utilizes a unique vertical structure, which optimizes the device's on-resistance and reduces gate charge (Q<sub>g), enhancing the overall efficiency of the MOSFET. This results in lower switching losses, making the STB15NM60N an energy-efficient choice for designers who are conscious about power consumption and thermal management in their systems.

This MOSFET is encapsulated in a TO-220 package, which provides a good balance between thermal performance and size, making it suitable for both compact designs and those that require a higher power density. The package is designed to be easily mounted onto a printed circuit board and offers excellent thermal transfer properties, ensuring that the MOSFET operates within its specified temperature range even under high-load conditions.

In summary, the STB15NM60N N-Channel MOSFET from STMicroelectronics is a high-voltage, high-performance component that offers low on-resistance, high efficiency, and the benefits of MDmesh™ technology. It is an ideal choice for engineers looking to enhance the performance and reliability of their power management systems.

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