STB16N65M5 - N-channel 650 V, 0.190 Ohm typ., 11 A MDmesh™ M5 Power MOSFET in D2PAK package

The STB16N65M5 from STMicroelectronics is a high-performance N-channel Power MOSFET that is part of the MDmesh™ M5 series. It is designed to operate at a voltage of 650 V, making it suitable for a wide range of high voltage applications. This MOSFET is characterized by a very low on-resistance of just 0.190 Ohm typical, which ensures high efficiency in power conversion and minimizes conduction losses.

This device is capable of handling continuous currents up to 11 A, making it a reliable choice for demanding power applications. The STB16N65M5 utilizes STMicroelectronics' innovative MDmesh™ M5 technology, which combines the benefits of reduced on-resistance and low gate charge to achieve superior switching performance. This technology is especially optimized for high-efficiency power supplies and is well-suited for applications such as switch-mode power supplies (SMPS), LED lighting, welding, telecom, and solar inverters.

The STB16N65M5 is housed in a robust D2PAK package, which provides excellent thermal performance and is suitable for compact designs. The package is designed to handle high levels of thermal and mechanical stress, ensuring reliability and a long operational life for the component.

Key features of the STB16N65M5 include:

• Max RDS(on) of 0.190 Ohm at 10 V
• Continuous drain current (ID) of 11 A
• Low threshold voltage (VGS(th))
• Fast switching speed
• 100% avalanche tested
• High dv/dt capability
• Zener-protected

STMicroelectronics provides comprehensive technical support for the STB16N65M5, including detailed datasheets, application notes, and design resources to assist engineers in integrating this MOSFET into their designs with confidence. With its advanced features and robust package, the STB16N65M5 is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems.