The STB18N60DM2 is a state-of-the-art N-Channel MOSFET brought to you by STMicroelectronics, designed to deliver high efficiency and power density for a wide range of applications. This device is part of the MDmesh™ DM2 series, which utilizes an innovative proprietary vertical structure that combines a high voltage breakdown with low on-resistance, optimizing it for high-performance switching applications.

Key Features

• Voltage Rating: The STB18N60DM2 boasts a robust maximum voltage rating of 600V, making it suitable for high voltage applications.
• On-Resistance: It features a low on-resistance (R<sub>DS(on)) of typically 0.165 Ω, ensuring minimal power loss and improved efficiency.
• Current Capability: This MOSFET has a continuous drain current (I<sub>D) of 18A at 25°C, providing ample current for a variety of uses.
• Fast Switching Speed: With fast switching performance, the STB18N60DM2 enhances power efficiency and reduces switching losses.
• Temperature Performance: It is designed to perform reliably over a wide operating temperature range, making it suitable for challenging environments.
• 100% Avalanche Tested: Guaranteed reliability and robustness in applications subject to high energy pulses.
• Low Gate Charge: Reduced gate charge (Q<sub>g) facilitates faster switching and lower driving power.

Applications

The STB18N60DM2 is ideal for a range of power applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC-DC Converters
• Welding Equipment
• Uninterruptible Power Supplies (UPS)
• Motor Control

Package and Quality

This MOSFET comes in a TO-220 package, which is widely used and allows for easy mounting and heat dissipation. STMicroelectronics ensures the highest quality and reliability of its products, and the STB18N60DM2 is no exception, meeting rigorous industry standards for performance and durability.