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STP38N65M5

Part No STP38N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 30A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 71nC @ 10V
Max Input Capacitance 3000pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 95 mOhm @ 15A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1103684-STP38N65M5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP38N65M5 CAD Model

Description

STP38N65M5 - N-channel 650 V, 0.033 Ω typ., 34 A MDmesh™ M5 Power MOSFET in a TO-220 package

The STP38N65M5 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the innovative MDmesh™ M5 technology. This device is tailored for applications requiring high efficiency and power density. It is housed in a robust TO-220 package, which is well-suited for through-hole mounting, making it a versatile choice for various power supply and switching applications.

With a drain-source voltage (V<sub>DS) of 650 V, the STP38N65M5 is capable of handling high voltage applications while providing a low on-resistance (R<sub>DS(on)) of just 0.033 Ω (typical). This low on-resistance minimizes conduction losses, making the MOSFET an excellent choice for improving energy efficiency in electronic circuits.

The device boasts a continuous drain current (I<sub>D) of 34 A at 25°C, which allows it to drive significant loads. This high current capability, combined with the fast-switching performance, makes the STP38N65M5 suitable for a wide range of applications, including switch-mode power supplies (SMPS), LED lighting, high-efficiency converters, and motor control systems.

The MDmesh™ M5 technology integrates a vertical structure, which optimizes the R<sub>DS(on) versus the drain current capability, providing an excellent figure of merit for high-efficiency power conversion. Additionally, the MOSFET features Zener-protected gate, which helps to enhance reliability and protect against overvoltage transients.

Moreover, the STP38N65M5 is characterized by a low gate charge (Q<sub>g), which reduces switching losses and enables faster switching frequencies. This characteristic, along with the device's low intrinsic capacitances, ensures reduced switching times and enhanced overall performance.

STMicroelectronics is committed to environmental sustainability, and the STP38N65M5 is designed in accordance with the company's focus on creating energy-saving products. It complies with the stringent European RoHS directive, which restricts the use of hazardous substances in electrical and electronic equipment.

In summary, the STP38N65M5 Power MOSFET from STMicroelectronics is a robust and efficient solution for designers looking to optimize their power management systems with a reliable and high-performing component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.0581 $60.6972
28+ $4.1503 $116.2084
44+ $4.0206 $176.9064
60+ $3.8909 $233.4540
77+ $3.7613 $289.6201
103+ $3.3721 $347.3263
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Availability: 8,700 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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