The STB200N6F3 is a high-performance N-channel Power MOSFET product manufactured by STMicroelectronics, a leader in semiconductor solutions. This device boasts state-of-the-art technology designed for optimal efficiency and reliability in a wide range of applications, including switch-mode power supplies (SMPS), high-efficiency DC-DC converters, and motor control systems.

Key Features

• Low On-Resistance: The STB200N6F3 features an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
• High Current Capability: With a continuous drain current (I<sub>D) of 120A, this MOSFET can handle high levels of current, making it suitable for demanding power applications.
• Enhanced Power Density: The device's compact and robust design allows for higher power density, enabling the creation of smaller and more powerful electronic designs.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability and durability even under extreme conditions.
• Low Gate Charge: The MOSFET's low gate charge (Q<sub>g) minimizes switching losses and allows for faster switching speeds.

Applications

The versatility of the STB200N6F3 makes it an excellent choice for a variety of applications. It is particularly well-suited for:

• High-efficiency switch-mode power supplies (SMPS)
• Power management systems
• DC-DC converters
• Motor drives and inverters
• Automotive applications and load switches

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 60V Continuous Drain Current (I<sub>D) 120A Power Dissipation (P<sub>D) 165W Operating Temperature Range -55°C to 175°C R<sub>DS(on) 6.3mΩ

With its robust performance and high reliability, the STB200N6F3 from STMicroelectronics is an ideal choice for designers looking to enhance the efficiency and longevity of their power management systems.