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STB20N60M2-EP

Part No STB20N60M2-EP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M2-EP
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB20
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278066-STB20N60M2-EP
Ultra Librarian 3D Model Ultra Librarian STB20N60M2-EP CAD Model

Description

The STB20N60M2-EP is a high-performance, robust power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This particular device is part of the MDmesh™ M2 EP series, which is renowned for its excellent energy efficiency and thermal performance. The STB20N60M2-EP is engineered to meet the demanding needs of a wide range of power applications, including switched-mode power supplies (SMPS), high-efficiency converters, and motor control systems.

With a maximum drain-source voltage (VDS) of 600V, the STB20N60M2-EP is well-suited for handling high voltage operations, making it a reliable choice for industrial and consumer applications that require a robust power handling capability. The device boasts a low on-resistance (RDS(on)) of just 0.165Ω, which ensures minimal power loss and maximizes efficiency during operation.

This MOSFET utilizes STMicroelectronics' innovative MDmesh™ technology, which combines a vertical structure with a proprietary strip layout to achieve a very low on-resistance and reduced gate charge (Qg). These features contribute to the reduction of conduction and switching losses, leading to a higher overall system efficiency. The STB20N60M2-EP also offers a fast recovery diode, which is essential for high-speed switching applications.

The device comes in a TO-220 package, which is widely used in the industry and known for its ease of installation and heat dissipation properties. The STB20N60M2-EP is also characterized by its high ruggedness and improved avalanche capability, which ensures reliability and longevity even under harsh operating conditions.

Additional features of the STB20N60M2-EP include a 100% avalanche tested design, a high dv/dt capability, and Zener-protected gate, which provides enhanced protection against overvoltage events. With these features, the STB20N60M2-EP stands out as a high-quality power MOSFET that offers both performance and reliability for advanced power conversion systems.

Whether for industrial drives, power supplies, or energy management systems, the STB20N60M2-EP from STMicroelectronics represents a state-of-the-art solution that engineers can rely on to deliver optimal performance in a wide array of power applications.

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