STB23N80K5 - N-channel 800 V, 0.135 Ω typ., 16 A MDmesh™ K5 Power MOSFET in D2PAK package

The STB23N80K5 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the innovative MDmesh™ K5 technology. This device is tailored for high efficiency and reliability in a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, solar inverters, and other energy-related applications.

With a maximum voltage rating of 800 V, the STB23N80K5 ensures safe operation even under high voltage conditions. The low on-resistance of 0.135 Ω typ. at 10 V enhances the overall efficiency by minimizing conduction losses, making it an excellent choice for high-performance power conversion systems.

This MOSFET can handle continuous current up to 16 A, making it robust enough for demanding power applications. The D2PAK package is well-suited for compact designs, providing a space-saving solution without compromising on power handling capabilities.

The MDmesh™ K5 technology integrates a vertical structure that optimizes the RDS(on) per area, which is beneficial for applications requiring high current density. This technology also features reduced gate charge and capacitance, which improves switching performance and further enhances efficiency.

Key features of the STB23N80K5 include:

• Low threshold voltage
• Low input capacitance and gate charge
• 100% avalanche tested
• Zener-protected

The device is also characterized by its robustness, with high dv/dt and avalanche capabilities, ensuring reliability and long-term stability. The built-in Zener diode provides protection against overvoltage, contributing to the safety of the application it is used in.

Overall, the STB23N80K5 from STMicroelectronics is a versatile and reliable component that offers a blend of high voltage capability, low conduction losses, and efficient switching performance, making it a top choice for designers seeking to optimize their power management solutions.