The STB26NM60N is a high-performance N-channel Power MOSFET presented by STMicroelectronics, designed to offer superior power efficiency and high current handling capabilities. This device is part of the MDmesh™ II series, which utilizes an innovative proprietary vertical structure that combines a low on-resistance (R<sub>DS(on)) with a fast switching speed, making it ideal for a wide range of high-power applications.

Key Features

• High Voltage Capability: The STB26NM60N is capable of withstanding voltages up to 600V, providing a robust solution for high voltage applications.
• Low On-Resistance: With an R<sub>DS(on) of just 0.165 ohm, this MOSFET ensures minimal power loss and improved overall efficiency.
• High Current Rating: It can handle continuous currents up to 20A, making it suitable for high current switching and power supply applications.
• Reduced Gate Charge: The device features a reduced gate charge (Qg), which enhances the switching performance and reduces switching losses.
• Improved dv/dt Capability: The STB26NM60N is designed to withstand high dv/dt rates, ensuring reliable operation in fast-switching environments.
• 100% Avalanche Tested: Each unit is guaranteed to be avalanche tested, ensuring reliability under extreme conditions.
• Versatile Package Options: Available in D2PAK, I2PAK, TO-220, and TO-220FP packages to fit various mounting and space requirements.

Applications

The STB26NM60N is well-suited for a broad range of applications, including:

• Switch Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• High-performance DC-DC converters
• Motor control applications
• LED lighting solutions

Quality and Reliability

STMicroelectronics is committed to providing products that meet the highest standards of quality and reliability. The STB26NM60N MOSFET is a testament to this commitment, offering superior performance and durability for the most demanding power management tasks.