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PHD21N06LT

Part No PHD21N06LT
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 19A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 9.4nC @ 5V
Max Input Capacitance 650pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 045756-PHD21N06LT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHD21N06LT CAD Model

Description

Introducing the PHD21N06LT from NXP Semiconductors

The PHD21N06LT is a cutting-edge TrenchMOS™ logic level FET designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This high-performance product is part of NXP's TrenchMOS portfolio, which is renowned for its high efficiency and low power dissipation. The device is specifically tailored for automotive and general-purpose power switching applications.

Key Features

  • Low Threshold Voltage: The device boasts a low threshold voltage, making it compatible with logic level drive sources. This feature simplifies the design of control circuits as it can be directly driven by microcontrollers without the need for additional driver circuits.
  • High-Speed Switching: With its fast switching capabilities, the PHD21N06LT is ideal for high-frequency applications, ensuring efficient operation and reduced switching losses.
  • Robust Thermal Performance: The product is encapsulated in a TO-252 (DPAK) surface-mounted package, which is known for its excellent thermal conduction properties. This allows the device to maintain stable performance even under high temperature conditions.
  • Low On-State Resistance: The TrenchMOS technology used in the PHD21N06LT results in a very low on-state resistance (R<sub>DS(on)), minimizing conduction losses and improving overall efficiency.
  • Enhanced Durability: Engineered for longevity, the device is capable of withstanding high energy pulses in the avalanche and commutation modes, which is crucial for applications that may experience unexpected voltage spikes.

Applications

The versatility of the PHD21N06LT makes it suitable for a wide array of applications, including:

  • Automotive systems such as engine management and powertrain controls
  • DC/DC converters and power management circuits
  • Motor drives and controllers
  • Switch-mode power supplies (SMPS)

With its robust design and high-performance characteristics, the PHD21N06LT from NXP Semiconductors is an excellent choice for designers looking for a reliable and efficient power switching solution. Its logic level compatibility and energy-efficient operation make it a valuable component in both automotive and general-purpose electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8129 $60.9675
175+ $0.6671 $116.7425
270+ $0.6463 $174.5010
370+ $0.6253 $231.3610
480+ $0.6045 $290.1600
640+ $0.5419 $346.8160
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,800 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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