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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 22A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 148mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 45nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1865pF at 100V
Power Dissipation (Maximum) 150W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1260639-STB31N65M5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB31N65M5 CAD Model

Description

STB31N65M5 - N-channel 650 V, 0.074 Ohm typ., 31 A MDmesh™ M5 Power MOSFET in D2PAK package

The STB31N65M5 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, designed to meet the efficiency and reliability demands of modern high-power electronic applications. This device is part of the MDmesh™ M5 series, which is renowned for its excellent performance in high voltage applications, thanks to its innovative technology that reduces on-resistance and total power losses.

With a voltage rating of 650 V, the STB31N65M5 is well-suited for applications that require a robust and efficient power handling capability. It features a very low typical on-resistance of just 0.074 Ohms, which signifies minimal power loss during operation, thereby enhancing the overall efficiency of the system it is used in. The device is capable of handling continuous currents up to 31 A, making it a reliable choice for high current scenarios.

The STB31N65M5 is housed in a D2PAK package, which is known for its compact size and ability to handle high thermal loads. This packaging allows for efficient heat dissipation and is suitable for surface mount technology (SMT), providing a space-saving solution on printed circuit boards (PCBs).

This Power MOSFET incorporates STMicroelectronics' advanced MDmesh™ M5 technology, which integrates a vertical structure that enhances carrier mobility and reduces on-state resistance. This results in lower conduction losses and improved switching performance, making it ideal for high-efficiency power supplies, lighting applications, welding equipment, and solar inverters.

Key features of the STB31N65M5 include a fast recovery diode, which is essential for high-speed switching applications. It also boasts excellent robustness and reliability, with an extended operating junction temperature range, which ensures stable performance even under extreme conditions.

STMicroelectronics provides comprehensive technical support and documentation for the STB31N65M5, ensuring that designers can fully utilize its capabilities for their specific applications. With its combination of high voltage capability, low on-resistance, and efficient thermal management, the STB31N65M5 is an excellent choice for power conversion applications demanding high efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.6557 $65.8026
44+ $2.9998 $131.9912
67+ $2.9067 $194.7489
92+ $2.8123 $258.7316
119+ $2.7191 $323.5729
160+ $2.4371 $389.9360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 95,900 pieces
MOQ: 18 pcs
Order Increment : 1 piece
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