The STB3N62K3 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, designed with the SuperMESH™3 technology that combines the benefits of reduced on-resistance, minimized gate charge, and superior ruggedness. It's tailored for high efficiency and reliability in a wide range of applications, including switch-mode power supplies, lighting, motor control, and industrial purposes.

Key Features

• High Voltage Capability: The device is rated at 620 V, making it suitable for high voltage applications, ensuring safe operation under harsh conditions.
• Low On-Resistance: With a typical on-resistance of just 2.4 Ω, the STB3N62K3 achieves high efficiency, reducing power loss during operation.
• High Current Rating: The MOSFET can handle continuous currents up to 3 A, allowing for robust performance in a variety of power applications.
• Reduced Gate Charge: The minimized gate charge ensures faster switching performance and reduced switching losses, which is critical for high-frequency power conversion.
• 100% Avalanche Tested: This guarantees the MOSFET's ruggedness and reliability, ensuring performance under extreme conditions.
• Enhanced Body Diode: The fast recovery body diode contributes to improved efficiency, especially in hard-switching applications.
• D²PAK Package: The STB3N62K3 comes in a surface-mount D²PAK package, offering a compact form factor and excellent thermal performance.

Applications

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High Efficiency DC-DC Converters
• Motor Control
• Industrial Applications

The STB3N62K3 is a testament to STMicroelectronics' commitment to providing advanced power devices that meet the needs of modern electronic systems. By leveraging the SuperMESH™3 technology, this MOSFET ensures energy-efficient solutions while maintaining high performance and reliability.