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STB78NF55-08

Part No STB78NF55-08
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series STripFET™ II
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3740 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB78N
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278007-STB78NF55-08
Ultra Librarian 3D Model Ultra Librarian STB78NF55-08 CAD Model

Description

The STB78NF55-08 is a robust N-Channel MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and high-performance electronic components. This powerhouse MOSFET is part of ST's STripFET™ series, which are known for their low on-resistance and high switching performance. The STB78NF55-08 is specifically engineered to deliver high efficiency and reliability for a wide range of applications.

Key Features

  • Low Threshold Drive: The device features a low threshold voltage, making it suitable for low voltage applications and enabling it to be driven by logic-level voltages.
  • High Current Capability: With a continuous drain current of 80A, the STB78NF55-08 is capable of handling high current loads, making it ideal for power-intensive applications.
  • Low On-Resistance: The MOSFET boasts an exceptionally low on-resistance (R<sub>DS(on)) of just 0.0085 ohms, which translates to reduced power losses and improved overall efficiency.
  • 100% Avalanche Tested: Ensuring reliability and performance under extreme conditions, each unit is rigorously tested for avalanche breakdown resilience.
  • Application Versatility: This component is suitable for a variety of applications, including high-efficiency DC/DC converters, motor control circuits, and power management solutions.

Product Specifications

The STB78NF55-08 operates with a maximum drain-source voltage (V<sub>DSS) of 55V, which provides a good balance between breakdown voltage and on-resistance. The device is also characterized by a maximum gate-source voltage (V<sub>GS) of ±20V, offering a wide margin for gate drive design. The MOSFET's maximum junction temperature is specified at 175°C, allowing for operation in high-temperature environments.

Package and Mounting

Housed in a D2PAK surface-mount package, the STB78NF55-08 is designed for compact PCB layouts and is optimized for easy mounting and heat dissipation. The package is RoHS compliant and is designed with environmentally friendly materials.

Whether you're designing power supplies, automotive electronics, or industrial control systems, the STB78NF55-08 N-Channel MOSFET from STMicroelectronics offers the performance and reliability you need to power your innovations.

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