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STB80N20M5

Part No STB80N20M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 61A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 104nC @ 10V
Max Input Capacitance 4329pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 30.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 031087-STB80N20M5
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name STB80N20M5
Introduction Date July 01, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian STB80N20M5 CAD Model

Description

STB80N20M5 - N-channel MOSFET by STMicroelectronics

The STB80N20M5 is a state-of-the-art N-channel 200 V, 4.5 mΩ typ., 80 A STripFET™ V Power MOSFET, produced using the latest generation of STMicroelectronics' proprietary STripFET technology. This product is specifically designed to deliver high efficiency and improved power density for a wide range of applications, making it a perfect choice for designers looking to enhance system performance while ensuring reliability and energy savings.

Key Features

  • Low On-Resistance: With a typical on-resistance of just 4.5 mΩ, the STB80N20M5 offers exceptional conduction efficiency, which translates into lower losses and improved thermal performance.
  • High Current Capability: The device is capable of handling continuous currents up to 80 A, making it suitable for high-power applications.
  • 200 V Maximum Drain-Source Voltage: The high breakdown voltage allows for reliable operation in circuits with high voltage requirements.
  • 100% Avalanche Tested: Ensuring ruggedness and reliability, each unit is guaranteed to withstand stressful conditions.
  • Low Gate Charge and Input Capacitance: These features contribute to reduced switching losses, enabling high-frequency operation and improved overall efficiency.

Applications

The versatility of the STB80N20M5 MOSFET makes it an ideal choice for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-Efficiency DC-DC Converters
  • Motor Control Systems
  • LED Lighting Solutions
  • Automotive Applications
  • Power Management Functions

With its robust design and superior electrical characteristics, the STB80N20M5 is engineered to meet the demands of modern electronic systems, offering a combination of high performance and reliability that is synonymous with STMicroelectronics' products. Whether you are developing power conversion solutions or looking to enhance your system's power handling capabilities, the STB80N20M5 provides a compact, efficient, and durable solution.

Quality and Environmental Compliance

The STB80N20M5 is compliant with RoHS and Halogen-Free standards, reflecting STMicroelectronics' commitment to environmental sustainability. Customers can trust that they are incorporating an environmentally conscious product into their designs, without compromising on performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.4701 $52.2907
15+ $6.9974 $104.9610
23+ $6.7610 $155.5030
32+ $6.2882 $201.2224
42+ $6.0518 $254.1756
52+ $5.8154 $302.4008
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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