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STB80N4F6AG

Part No STB80N4F6AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A D2PAK  /  N-Channel 40 V 80A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101, STripFET™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2150 pF @ 25 V
Power Dissipation (Max) 70W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB80
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16506-1,-497-16506-2,497-16506-6,-497-16506-1,-497-16506-6,497-16506-2
Standard Package 1,000
Win Source Part Number 984741-STB80N4F6AG
Ultra Librarian 3D Model Ultra Librarian STB80N4F6AG CAD Model

Description

STB80N4F6AG - STMicroelectronics N-Channel MOSFET

Introducing the STB80N4F6AG, a state-of-the-art N-channel Power MOSFET from STMicroelectronics, designed to deliver high-efficiency power management and conversion for a wide range of applications. This robust MOSFET is a part of ST's STripFET™ VI DeepGATE™ technology, which is renowned for its superior performance in terms of low on-resistance and minimal gate charge.

Key Features

  • Low Threshold Drive: The STB80N4F6AG operates at a low gate threshold voltage, making it suitable for low voltage applications and ensuring easy drive capability.
  • High Current Capability: With a continuous drain current of 80A, this MOSFET can handle high current loads, making it ideal for power-intensive applications.
  • Low On-Resistance (R<sub>DS(on)): The device boasts an extremely low on-resistance of only 4.6 mΩ, which enhances overall efficiency by reducing conduction losses.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in harsh conditions.
  • Enhanced Thermal Performance: The MOSFET comes in a D2PAK package, known for its excellent thermal characteristics, ensuring stable performance even at high temperatures.

Applications

The STB80N4F6AG is versatile and can be used in a variety of applications, including:

  • High-efficiency DC/DC converters
  • Motor control circuits
  • Power management solutions
  • Switching regulators
  • Power supplies for servers, telecom, and industrial uses

Quality and Environmental Compliance

STMicroelectronics is committed to environmental sustainability and quality. The STB80N4F6AG complies with the RoHS directive and is free from harmful substances. It is also designed to meet the highest quality standards, ensuring reliable performance in a range of environmental conditions.

With its combination of efficiency, reliability, and power handling capabilities, the STB80N4F6AG is a top choice for designers looking to optimize their power systems with a high-performance N-channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5123 $51.2300
240+ $0.4203 $100.8720
370+ $0.4072 $150.6640
510+ $0.3941 $200.9910
660+ $0.3809 $251.3940
880+ $0.3415 $300.5200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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