STB80N4F6AG - STMicroelectronics N-Channel MOSFET
Introducing the STB80N4F6AG, a state-of-the-art N-channel Power MOSFET from STMicroelectronics, designed to deliver high-efficiency power management and conversion for a wide range of applications. This robust MOSFET is a part of ST's STripFET™ VI DeepGATE™ technology, which is renowned for its superior performance in terms of low on-resistance and minimal gate charge.
Key Features
- Low Threshold Drive: The STB80N4F6AG operates at a low gate threshold voltage, making it suitable for low voltage applications and ensuring easy drive capability.
- High Current Capability: With a continuous drain current of 80A, this MOSFET can handle high current loads, making it ideal for power-intensive applications.
- Low On-Resistance (R<sub>DS(on)): The device boasts an extremely low on-resistance of only 4.6 mΩ, which enhances overall efficiency by reducing conduction losses.
- 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in harsh conditions.
- Enhanced Thermal Performance: The MOSFET comes in a D2PAK package, known for its excellent thermal characteristics, ensuring stable performance even at high temperatures.
Applications
The STB80N4F6AG is versatile and can be used in a variety of applications, including:
- High-efficiency DC/DC converters
- Motor control circuits
- Power management solutions
- Switching regulators
- Power supplies for servers, telecom, and industrial uses
Quality and Environmental Compliance
STMicroelectronics is committed to environmental sustainability and quality. The STB80N4F6AG complies with the RoHS directive and is free from harmful substances. It is also designed to meet the highest quality standards, ensuring reliable performance in a range of environmental conditions.
With its combination of efficiency, reliability, and power handling capabilities, the STB80N4F6AG is a top choice for designers looking to optimize their power systems with a high-performance N-channel MOSFET.