STB8N65M5 - N-channel 650 V, 1.7 Ohm typ., 6 A MDmesh™ M5 Power MOSFET in D²PAK package

The STB8N65M5 from STMicroelectronics is a high-performance, N-channel Power MOSFET designed with the innovative MDmesh™ M5 technology. This device is tailored for high efficiency in a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, and high-frequency converters.

The MDmesh™ M5 series is renowned for its excellent on-state resistance (R<sub>DS(on)) and low gate charge (Q<sub>g), which significantly reduce conduction and switching losses. The STB8N65M5 boasts a typical R<sub>DS(on) of just 1.7 Ohm and is capable of delivering a continuous drain current (I<sub>D) of up to 6 A, making it an ideal choice for power applications requiring a high level of efficiency and reliability.

With a breakdown voltage of 650 V, this MOSFET provides a generous safety margin for applications subject to high voltage spikes, ensuring robust performance and longevity. The device is encapsulated in a D²PAK (TO-263) package, which offers a compact footprint while allowing for excellent thermal dissipation.

Key features of the STB8N65M5 include:

• Maximum continuous drain current (I<sub>D): 6 A
• Low threshold voltage (V<sub>GS(th))
• Low input capacitance (C<sub>iss)
• 100% avalanche tested for reliable operation
• High dv/dt capability

Suitable for a variety of switching applications, the STB8N65M5 is not only energy-efficient but also minimizes the environmental impact by reducing power dissipation. Its robustness and high-performance characteristics make it a prime choice for designers looking to optimize their power management systems.

STMicroelectronics is committed to providing industry-leading semiconductor solutions, and the STB8N65M5 is a testament to their dedication to quality and innovation in the field of power electronics.