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STD100N3LF3

Part No STD100N3LF3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 27nC @ 5V
Max Input Capacitance 2060pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102838-STD100N3LF3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STD100N3LF3 CAD Model

Description

STMicroelectronics STD100N3LF3 N-Channel MOSFET

The STD100N3LF3 is a state-of-the-art N-channel MOSFET manufactured by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to deliver high efficiency and reliability for a wide range of applications, including switch-mode power supplies, motor control, and power management tasks.

With its advanced STripFET™ III technology, the STD100N3LF3 offers an excellent on-resistance (RDS(on)) of just 100 mΩ at a gate voltage of 10V, minimizing conduction losses and improving overall system efficiency. The device is capable of handling continuous drain currents up to 80A, making it suitable for high current applications.

The MOSFET operates over a wide voltage range, with a maximum drain-source voltage (VDSS) of 30V, which provides a good safety margin for most low to medium voltage applications. Its threshold voltage (Vth) is specified at a typical value of 2.1V, ensuring low gate drive requirements and compatibility with a variety of drive circuits.

The STD100N3LF3 comes in a robust and compact DPAK package, designed to offer improved thermal resistance and a smaller footprint on the PCB. This package is optimized for use in space-constrained environments while still providing excellent heat dissipation characteristics.

Protection features are also a key aspect of this product. The STD100N3LF3 is equipped with an integrated diode for fast body-drain recovery, which helps to protect the device against inductive loads and ensures reliable operation in circuits where inductive kickback can occur.

Overall, the STD100N3LF3 from STMicroelectronics is a versatile and high-performance N-channel MOSFET that provides designers with a cost-effective solution for a broad array of power switching applications. Its combination of low on-resistance, high current capability, and thermal efficiency make it a preferred choice for engineers looking to optimize their power management systems.

For detailed specifications and application support, visit STMicroelectronics' website or contact their support team to ensure the best integration of the STD100N3LF3 into your design.

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